Nanometer-resolution CL with pico-second timing for semiconductor defect inspection
Classify defects in SiC wafers using spectrally-resolved CL; Monitor epitaxial layer uniformity in GaN power devices; Analyze lead halide perovskite optical properties with CL-STEM; Perform non-destructive quality control in semiconductor manufacturing; Characterize crystallographic defects in glass and ceramics
30+ systems installed globally; Partnerships with Korea ITS and Loughborough University; Trusted by top semiconductor companies and research institutes including CEA-LETI, Lawrence Berkeley National Lab, and Yale University